WebMay 6, 2007 · Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum dot ring lasers with high unidirectionality is reported. ... “Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well”, Electron. Lett. 35, 1163-1165 . 1999; Related Papers. … WebAug 5, 2024 · Abstract and Figures We present gate voltage and temperature dependent transport measurements of InAs/GaSb/InAs triple quantum wells (TQWs) with a designed hybridization gap energy of 4 meV...
Intersubband Optical Properties of Strained InAsSb/AlGaAs …
WebDec 13, 2012 · This paper reports Extremely-Thin-Body (ETB) InAs quantum-well (QW) MOSFETs with improved electrostatics down to L g = 50 nm (S =103 mV/dec, DIBL = 73 mV/V). These excellent metrics are achieved by using extremely thin body (1/3/1 nm InGaAs/InAs/InGaAs) quantum well structure with optimized layer design and a high … WebJan 23, 2015 · Thin InAs/GaSb quantum wells or superlattices behave as conventional semiconductor with an effective bandgap tunable across the entire infrared regime, … reds chocolate
Magneto-transport in InAs/AlSb quantum wells with large electron ...
WebAug 11, 2024 · The effects of quantum confinement, wavefunction penetration into (In,Ga)As, and strain are renormalized as a shift in the in-plane effective mass in InAs from a bulk value of 0.023 m 0 to... WebAbstract. We discuss the growth by molecular-beam epitaxy, and studies of the low-temperature electrical properties, of undoped InAs/AlSb quantum wells. The two … WebJan 1, 1992 · The relation of gate voltage to density of mobile carriers obtained from these measurements was in agreement with the simple capacitor model, indicating the absence of Fermi level pinning in the quantum well. InAs/AISb quantum wells are of interest because of the large conduction band offset of 1.3 eV between A1Sb and InAs [1] and the high ... red school antiques